Ageing of amorphous silicon devices in dependence of irradiance dose
نویسندگان
چکیده
The ageing behaviour of amorphous silicon (a-Si) devices is investigated in dependence of different light and temperature conditions. Eight a-Si mini-modules are illuminated and kept at constant temperature in an environmental chamber. The ageing behaviour is characterised in terms of a temperature-dependent irradiance dose rather than the exposure time or irradiance dependence in order to investigate possible ageing dependencies of environmental strains and to develop models for device long-term degradation.
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